Damage morphologies and causes of laser induced damage of thin oxide films at 248 nm

Conference · Sun Dec 31 04:00:00 EST 1995

OSTI ID:552216

Pfeifer, G; Erben, E; Reisse, G; Steiger, B ^[1]

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1. Fachgruppe Physik, Mittweida (Germany); and others

The effect of ultraviolet laser radiation (248 m) on dielectric thin films can be separated into intrinsic absorption of the film material, absorption at structure faults of the layer like grain boundaries of F-centers and the absorption at inclusions of different materials. Beside this, the film substrate interface as well as the substrate material by itself can act as absorbing regions. Our investigations to the damage morphology of laser induced changes at oxide thin films show typical damage structures for the different sites, where the main part of the laser radiation was absorbed. In some cases we found surprising figures, e.g. lens formed film detachments between damage pits originating from absorbing inclusions. Together with calculations of the temperature field, which is generated by the laser pulse, the dominating damage mechanisms are estimated. At the oxide films under test the damage is released by inclusion absorption with additional film ablation by overlapping electron avalanches.

• Research Organization: International Society for Optical Engineering, Washington, DC (United States)
• OSTI ID: 552216
• Report Number(s): CONF-9410155--Vol.2428; CNN: Contract 13N5974
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
DAMAGE
LASER RADIATION
OXIDES
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
SURFACE COATING
THIN FILMS
ULTRAVIOLET RADIATION