An electron beam induced current study of gallium nitride and diamond materials
- Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)
- Morgan State Univ., Baltimore, MD (United States)
The continual need for microelectronic devices that operate under severe electronic and environmental conditions (high temperature, high frequency, high power, and radiation tolerance) has sustained research in wide bandgap semiconductor materials. The properties suggest these wide-bandgap semiconductor materials have tremendous potential for military and commercial applications. High frequency bipolar transistors and field effect transistors, diodes, and short wavelength optical devices have been proposed using these materials. Although research efforts involving the study of transport properties in Gallium Nitride (GaN) and Diamond have made significant advances, much work is still needed to improve the material quality so that the electrophysical behavior of device structures can be further understood and exploited. Electron beam induced current (EBIC) measurements can provide a method of understanding the transport properties in Gallium Nitride (GaN) and Diamond. This technique basically consists of measuring the current or voltage transient response to the drift and diffusion of carriers created by a short-duration pulse of radiation. This method differs from other experimental techniques because it is based on a fast transient electron beam probe created from a high speed, laser pulsed photoemission system.
- Research Organization:
- International Society for Optical Engineering, Washington, DC (United States)
- OSTI ID:
- 552191
- Report Number(s):
- CONF-9410155-Vol.2428; CNN: Grant N00014-93-1-0128; TRN: 98:009006
- Resource Relation:
- Conference: 26. annual Boulder damage symposium: laser-induced damage in optical materials, Boulder, CO (United States), 24-26 Oct 1994; Other Information: PBD: [1995]; Related Information: Is Part Of Laser-induced damage in optical materials: 1994. Twenty-sixth annual Boulder damage symposium, proceedings; Bennett, H.E.; Guenther, A.H.; Kozlowski, M.R.; Newnam, B.E.; Soileau, M.J. [eds.]; PB: 722 p.
- Country of Publication:
- United States
- Language:
- English
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