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Degradation of a Cu/sub x/S/CdS solar cell in hot, moist air and recovery in hydrogen and air

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.331858· OSTI ID:5520067
A polycrystalline, thin-film Cu/sub x/S/CdS solar cell was exposed to air saturated with water vapor at temperatures between 27 and 67 /sup 0/C for up to 6 1/2 h. The short-circuit current decreased progressively from 11.7 to 1.02 mA/cm/sup 2/. Subsequent heating in hydrogen at 150 /sup 0/C for 680 h and in 170 /sup 0/C air for 5 h restored the short-circuit current to 14.4 mA/cm/sup 2/. Modeling of the measured quantum yield indicates that the degradation could be quantitatively explained by two effects: (1) the Cu/sub x/S minority carrier electron diffusion length decreasing from 0.23 to 0.02 ..mu..m (+- 20%) and (2) the Cu/sub x/S optical band gap increasing from 1.16 to 1.46 eV (+- 3%). The recovery was quantitatively modeled by the Cu/sub x/S diffusion length increasing back to 0.24 ..mu..m and the Cu/sub x/S band gap returning to 1.16 eV. A Burstein--Moss analysis shows the band-gap shift is due to the Fermi level penetration of the valence band as the measured hole concentration increased from 1.03(10/sup 20/) cm/sup -3/ to 4.62(10/sup 21/) cm/sup -3/ during degradation. A new band structure is proposed with six equivalent, indirect, valence band maxima located at 1.16 eV (+- 3%) below the conduction band edge followed by two direct maxima located at 1.28 and 1.8 eV (+- 3%) below the conduction band edge. A density-of-states effective mass ratio for holes of 2.0 (+- 30%) is found. The sharp decrease and recovery in diffusion length is explained by a transition between phonon-assisted and direct minority carrier recombination with changes in Cu/sub x/S hole concentration.
Research Organization:
Chevron Research Company, Richmond, California 94802
OSTI ID:
5520067
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:11; ISSN JAPIA
Country of Publication:
United States
Language:
English