Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Effects of heat treatment on the optical and electrical properties of indium--tin oxide films

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.324386· OSTI ID:5163474
The effect of heat treatment in various environments on the electrical and optical properties of indium--tin oxide (ITO) sputtered films has been investigated. As the resistivity is decreased by heat treatment in H/sub 2/ from 8.3 x 10/sup -3/ to 4.3 x 10/sup -4/ ..cap omega.. cm, the optical band gap increases from 3.05 to 3.42 eV consistent with a Burstein shift and intrinsic band gap of 2.98 eV, and for resistivities less than 8.3 x 10/sup -4/ ..cap omega.. cm there is a rapid decrease in transmission at longer wavelengths due to free-carrier absorption and formation of dendritic precipitates. Careful control over all sputtering variables is essential to obtain reproducible properties.
Research Organization:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
OSTI ID:
5163474
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:1; ISSN JAPIA
Country of Publication:
United States
Language:
English

Similar Records

Properties of tin doped indium oxide thin films prepared by magnetron sputtering
Journal Article · Wed Jun 01 00:00:00 EDT 1983 · J. Appl. Phys.; (United States) · OSTI ID:5931278

Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate
Journal Article · Sat Oct 15 00:00:00 EDT 2005 · Journal of Applied Physics · OSTI ID:20719581

Ion-beam sputtered indium tin oxide for InP solar cells
Journal Article · Thu May 01 00:00:00 EDT 1986 · J. Vac. Sci. Technol., A; (United States) · OSTI ID:5663869