GaSb booster cells for over 30% efficient solar-cell stacks

Journal Article · Sun Oct 15 00:00:00 EDT 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.344051· OSTI ID:5507096

Fraas, L M; Girard, G R; Avery, J E; Arau, B A; Sundaram, V S; Thompson, A G ^[1]; Gee, J M ^[2]

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1. Boeing High Technology Center, Seattle, Washington 98124-6269 (US)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185

The fabrication of GaSb infrared-sensitive photovoltaic cells designed to boost the energy-conversion efficiency in tandem solar cell stacks is reported. Located behind GaAs solar-cells in 50{times} concentrated light configurations, these GaSb cells will boost the stack efficiency by 6.5 percentage points for space (AM0) and 7.0 percentage points for terrestrial (AM1.5D) applications. Assuming a GaAs cell efficiency of 26.7% (AM1.5D, 50{times}) as recently reported, the GaAs on GaSb stack efficiency will be 33.7%. Reduced series resistance in future GaSb cells will allow tandem-stack energy-conversion efficiencies over 35%.

• OSTI ID: 5507096
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:8; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIMONIDES
ANTIMONY COMPOUNDS
CONVERSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTROMAGNETIC RADIATION
ENERGY CONVERSION
EQUIPMENT
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
INFRARED RADIATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RADIATIONS
SOLAR CELLS
SOLAR EQUIPMENT