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Title: GaSb booster cells for over 30% efficient solar-cell stacks

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.344051· OSTI ID:5507096
; ; ; ; ;  [1];  [2]
  1. Boeing High Technology Center, Seattle, Washington 98124-6269 (US)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185

The fabrication of GaSb infrared-sensitive photovoltaic cells designed to boost the energy-conversion efficiency in tandem solar cell stacks is reported. Located behind GaAs solar-cells in 50{times} concentrated light configurations, these GaSb cells will boost the stack efficiency by 6.5 percentage points for space (AM0) and 7.0 percentage points for terrestrial (AM1.5D) applications. Assuming a GaAs cell efficiency of 26.7% (AM1.5D, 50{times}) as recently reported, the GaAs on GaSb stack efficiency will be 33.7%. Reduced series resistance in future GaSb cells will allow tandem-stack energy-conversion efficiencies over 35%.

OSTI ID:
5507096
Journal Information:
Journal of Applied Physics; (USA), Vol. 66:8; ISSN 0021-8979
Country of Publication:
United States
Language:
English