Solar cells based on gallium antimonide
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Liquid-phase epitaxy and diffusion from the gas phase have been used to create various kinds of GaSb-based solar cell structures intended for use in cascaded solar-radiation converters. A narrow-gap (GaSb) solar cell was studied in tandem based on a combination of semiconductors GaAs-GaSb (two p-n junctions) and GaInP/GaAs-GaSb (three p-n junctions). The maximum efficiency of photovoltaic conversion in GaSb behind the wide-gap cells is {eta} = 6.5% (at sunlight concentration ratio of 275X, AM1.5D Low AOD spectrum)
- OSTI ID:
- 21260361
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 43; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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