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U.S. Department of Energy
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(Research on ion implantation and annealing effects of deuterium into SiC, Garching, W. Germany, Guildford, England, Strasbourg, France, and Juelich, W. Germany, March 1--August 27, 1989)

Technical Report ·
DOI:https://doi.org/10.2172/5504895· OSTI ID:5504895
The traveler was on foreign research assignment at the Max-Planck-Institut fuer Plasmaphysik at Garching bei Muenchen, FRG, from March through August 1989. He participated in research in the area of ion implantation of deuterium into SiC and subsequent annealing effects. The traveler attended and presented papers on work done in the Solid State Division at ORNL at two conferences: the Low Energy Ion Beam-5 Conference held at Guildford, UK, and the European Materials Research Society Conference at Strasbourg, France. Seminars were also presented during a laboratory visit to Kernforschungsanlage, Juelich, FRG, and at IPP.
Research Organization:
Oak Ridge National Lab., TN (USA)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC05-84OR21400
OSTI ID:
5504895
Report Number(s):
ORNL/FTR-3376; ON: DE89017506
Country of Publication:
United States
Language:
English