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The diamond {sup 13}C/{sup 12}C isotope Raman pressure sensor system for high-temperature/pressure diamond-anvil cells with reactive samples

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.366268· OSTI ID:550423
; ;  [1]; ; ;  [2]; ;  [3]
  1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  2. Hawaii Institute of Geophysics and Planetology, School of Ocean and Earth Science and Technology, University of Hawaii, Honolulu, Hawaii 96822 (United States)
  3. General Electric Company, GE R D Center, Schenectady, New York 12309 (United States)
By using a thin {sup 13}C diamond chip together with a {sup 12}C diamond chip as sensors, the diamond Raman spectra provide the means to measure pressure precisely ({plus_minus}0.3 GPa) at any temperature (10{endash}1200 K) and simultaneous hydrostatic (or quasihydrostatic) pressure (0{endash}25 GPa) for {ital any} sample compatible with an externally heated diamond-anvil cell. Minimum interference between the Raman spectrum from the diamond anvils and those of the pressure sensors is obtained by measuring pressures with the Raman signal from the {sup 13}C diamond chip up to 13 GPa, and that from the {sup 12}C chip above 10 GPa. The best orientation of the diamond anvils is with the [100] direction along the direction of applied force, in order to further minimize the interference. At 298 K, the pressure dependence of the {sup 13}C diamond first-order Raman line is given by {nu}(P)={nu}{sub RT}+aP for 91 at.{percent} {sup 13}C diamond, where {nu}{sub RT}({sup 13}C)=1287.79{plus_minus}0.28cm{sup {minus}1} and a({sup 13}C)=2.83{plus_minus}0.05cm{sup {minus}1}/GPa. Analysis of values from the literature shows that the pressure dependence of the Raman line of {sup 12}C diamond is best described by the parameters {nu}{sub RT}({sup 12}C)=1332.5cm{sup {minus}1} and a({sup 12}C)=2.90{plus_minus}0.05cm{sup {minus}1}/GPa. The temperature dependence of the diamond Raman line is best described by {nu}(T){minus}{nu}{sub RT}=b{sub 0} for T{le}200K, and {nu}(T){minus}{nu}{sub RT}=b{sub 0}+b{sub 1.5}T{sub k}{sup 1.5} for 200K{le}T{le}1500K, where T{sub k}=T{minus}200K. For 91 at.{percent} {sup 13}C diamond, the parameters are b{sub 0}=0.450{plus_minus}0.025cm{sup {minus}1}; b{sub 1.5}={minus}(7.36{plus_minus}0.09){times}10{sup {minus}4}cm{sup {minus}1}K{sup {minus}1.5}; and for {sup 12}C diamond, the parameters are b{sub 0}=0.467{plus_minus}0.033cm{sup {minus}1}, b{sub 1.5}={minus}(7.56{plus_minus}0.10){times}10{sup {minus}4}cm{sup {minus}1}K{sup {minus}1.5}. (Abstract Truncated)
Research Organization:
Los Alamos National Laboratory
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
550423
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English