Relationship between the oxidation resistance and the high-temperature strength of silicon carbide materials

Journal Article · Tue Dec 31 23:00:00 EST 1985 · Refractories (Engl. Transl.); (United States)

OSTI ID:5500086

Gogotsi, Y G; Laurenko, V A

The authors studied the specimens of the self-bonded silicon carbide produced by the Brovarsk Powder Metallurgy Plant and the recrystallized silicon carbide Annanoks Sk. The ultimate bend strength was determined and oxidation was carried out on the specimens. According to the data of spectral analysis, the self-bonded SiC contained each of the impurities Ca, Mg, Fe, Al, Sn and Ti in quantities of about 0.1%, and Cu, Ni, Cr, and Mn in quantities of 0.01%. About 11% free silicon was found in the self-bonded SiC. Recrystallized silicon carbide possesses high oxidation resistance and retains its initial strength up to 1400 degrees C.

• Research Organization: Kiev Polytechnic Institute, Kiev
• OSTI ID: 5500086
• Journal Information: Refractories (Engl. Transl.); (United States), Journal Name: Refractories (Engl. Transl.); (United States) Vol. 26:5; ISSN REFRA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360203* -- Ceramics
Cermets
& Refractories-- Mechanical Properties
360205 -- Ceramics
Cermets
& Refractories-- Corrosion & Erosion
CARBIDES
CARBON COMPOUNDS
CHEMICAL BONDS
CHEMICAL REACTIONS
CORROSION
CORROSION RESISTANCE
DIFFERENTIAL THERMAL ANALYSIS
DIFFUSION
FLEXURAL STRENGTH
FRACTOGRAPHY
FRACTURE PROPERTIES
HEAT RESISTANT MATERIALS
IMPURITIES
MATERIALS
MATERIALS TESTING
MECHANICAL PROPERTIES
OXIDATION
QUANTITY RATIO
RECRYSTALLIZATION
REFRACTORIES
SILICON CARBIDES
SILICON COMPOUNDS
STRESS CORROSION
TEMPERATURE EFFECTS
TESTING
THERMAL ANALYSIS
ULTIMATE STRENGTH