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Methods of depositing an alpha-silicon-carbide-containing film at low temperature

Patent ·
OSTI ID:1339633

Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about 1400.degree. C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about 1400.degree. C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
9,546,420
Application Number:
14/452,322
OSTI ID:
1339633
Country of Publication:
United States
Language:
English

References (21)

Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties journal May 2003
Formation of stress-controlled, highly textured, α-SiC thin films at 950 °C journal July 2012
Low Pressure Chemical Etching of Silicon by HCl / H2 Gas Mixtures journal January 1987
Polycrystalline 3C-SiC thin films deposited by dual precursor LPCVD for MEMS applications journal March 2005
Effect of Reduced Pressure on 3C-SiC Heteroepitaxial Growth on Si by CVD journal September 2006
A computational study into the origin of SiC polytypes journal January 1992
Refinement of the crystal structure of SiC type 6H journal October 1967
Use of deposition pressure to control residual stress in polycrystalline SiC films journal January 2004
Thermodynamic Analysis of Blanket and Selective Epitaxy of Sic on Si and SiO2 Masked Si journal January 1996
Control of polytype formation in silicon carbide heteroepitaxial films by pulsed-laser deposition journal February 2004
Behavior of oxygen doped SiC thin films: An x-ray photoelectron spectroscopy study journal October 2000
A vacancy model of the heteropolytype epitaxy of SiC journal March 2005
Stress relaxation in Si-rich silicon nitride thin films journal May 1998
Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition journal July 2001
Low Stress Polycrystalline SiC Thin Films Suitable for MEMS Applications journal January 2011
A SiC MEMS Resonant Strain Sensor for Harsh Environment Applications journal April 2007
Tunable in situ growth of porous cubic silicon carbide thin films via methyltrichlorosilane-based chemical vapor deposition journal September 2009
Origin of Compressive Residual Stress in Polycrystalline Thin Films journal March 2002
Residual stress characterization of polycrystalline 3C-SiC films on Si(100) deposited from methylsilane journal July 2009
Surface and interface stress effects in thin films journal May 1994
Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment journal July 1997

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Related Subjects

36 MATERIALS SCIENCE