Effect of reemission on the photoluminescence spectra of graded-gap semiconductors

Journal Article · Wed Jan 01 00:00:00 EST 1986 · J. Appl. Spectrosc. (Engl. Transl.); (United States)

OSTI ID:5498864

Bazyk, A I; Kovalenko, V F; Peka, G P; Tokalin, O A

Photoluminescence spectra are widely used in photoluminescent methods for monitoring the parameters of graded-gap semiconducting structures in order to determine the basic parameters of such structures. The effect of multiple absorption and emission of recombination radiation photons, which deforms the photoluminescence spectra and can lead to appreciable errors in the determination of the transfer and recombination parameters of nonequilibrium charge carriers, are examined.

• OSTI ID: 5498864
• Journal Information: J. Appl. Spectrosc. (Engl. Transl.); (United States), Vol. 43:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GRADED BAND GAPS
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
ABSORPTION SPECTRA
ACCURACY
CHARGE CARRIERS
DIFFUSION
DIFFUSION LENGTH
MATHEMATICAL MODELS
MULTI-PHOTON PROCESSES
PHOTOEMISSION
PHOTONS
RECOMBINATION
DIMENSIONS
ELEMENTARY PARTICLES
EMISSION
LENGTH
LUMINESCENCE
MASSLESS PARTICLES
MATERIALS
SECONDARY EMISSION
SPECTRA
360603* - Materials- Properties