Tunneling conductance of metaloxide junctions
- National Academy of Sciences of Ukraine, Donetsk (Ukraine). A.Galkin Physico-Technical Inst.
The differential conductance behavior of metal/insulator/metaloxide and metaloxide/insulator/metaloxide tunnel structures has been studied. It is found that because of small Fermi energies of metaloxides a number of universally accepted principles of tunneling spectroscopy of conventional materials cease to be valid. First, the shape of tunneling characteristics of a metaloxide is unusually sensible to barrier parameters: the thickness of the insulating layer and the barrier height. If the barrier height is quite large or the thickness is small the dependence of tunnel conductance on voltage for a metaloxide/insulator/metaloxide structure manifests a zero-bias peak resistance anomaly. On further increasing the height or decreasing the thickness the dependence of conductance {sigma} versus voltage V decreases throughout the entire range of voltages. Second, the parabola-like dependence of {sigma}(V) for a metal/insulator/metaloxide structure calculated for a symmetrical rectangular potential barrier appears not to be symmetrical. Its minimum occurs at a finite voltage. Finally, in contrast to metal/oxide/metal contacts the metaloxide tunnel characteristics calculated in the WKB-approximation differ considerably from the corresponding ones obtained in the sharp boundaries model.
- OSTI ID:
- 549836
- Report Number(s):
- CONF-960163--; ISBN 0-8194-2070-0
- Country of Publication:
- United States
- Language:
- English
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