The influence of cerium ion implantation on early-stage oxidation kinetics of nickel
Book
·
OSTI ID:549822
- McGill Univ., Montreal, Quebec (Canada). Dept. of Metallurgical Engineering
The effect of implantation with 2 {times} 10{sup 16} ions/cm{sup 2} at 150 keV Ce+ on the oxidation of polycrystalline high purity Ni was examined. The radiation damage and distribution of Ce implants in Ni substrate were additionally modified by post-implantation ultra-high vacuum annealing at 1073 K. Ce implants decreased the Ni oxidation rate at 973 K by approximately one order of magnitude, and this reduction was similar to that achieved by 14 nm thick CeO{sub 2} sol-gel coatings and by 4 nm thick coatings of CeO{sub 2} deposited on the same substrate by reactive sputtering. Physical damage introduced by radiation caused a slight increase in oxidation rate during the very initial stages. However, the essential improvement in the oxidation resistance was derived entirely from the chemical role of the implants. The beneficial effect of Ce was reduced when the implanted Ni substrate was vacuum-annealed prior to the oxidation.
- OSTI ID:
- 549822
- Report Number(s):
- CONF-961202--; ISBN 1-55899-342-8
- Country of Publication:
- United States
- Language:
- English
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