The growth and structure of thin oxide films on cerium ion-implanted nickel

Journal Article · Fri Nov 01 04:00:00 EST 1996 · Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science

DOI:https://doi.org/10.1007/BF02595456· OSTI ID:413295

Czerwinski, F; Szpunar, J A ^[1]; Smeltzer, W W ^[2]

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1. McGill Univ., Montreal, Quebec (Canada). Dept. of Metallurgical Engineering
2. McMaster Univ., Hamilton, Ontario (Canada). Inst. for Materials Research

Cerium ions were implanted into a high purity polycrystalline Ni to a dose of 2 {times} 10{sup 16} Ce{sup +}/cm{sup 2}. The radiation damage and distribution of Ce in Ni substrate were modified by postimplantation vacuum annealing. The Ce implants significantly decreased the NiO growth rate at 973 K. Thin oxide films formed on implanted Ni were composed of three well-defined sublayers, each with an essentially different microstructure. Cerium was present in the near surface region of the oxide in the form of CeO{sub 2} particles, randomly distributed in NiO matrix, and Ce ion segregants at NiO grain boundaries. The size of CeO{sub 2} particles, formed during the initial stages of exposure to oxygen, affected the inhibition of oxide growth. Vacuum annealing following implantation decreased the inhibiting grain boundary diffusion in NiO is analyzed. As a result of this study, the growth mechanism of thin NiO films on Ce-implanted Ni is proposed.

• Sponsoring Organization: Natural Sciences and Engineering Research Council of Canada, Ottawa, ON (Canada)
• OSTI ID: 413295
• Journal Information: Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science, Journal Name: Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science Journal Issue: 11 Vol. 27; ISSN 1073-5623; ISSN MMTAEB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CERIUM
CERIUM OXIDES
DIFFUSION
GRAIN BOUNDARIES
ION IMPLANTATION
KINETICS
NICKEL
NICKEL OXIDES
OXIDATION
OXYGEN
PARTICULATES
SAMPLE PREPARATION