Formation of buried layers of (SiC){sub 1{minus}x}(AlN){sub x} in 6H-SiC using ion-beam synthesis
- Research Centre Rossendorf Inc., Dresden (Germany). Inst. of Ion Beam Physics and Materials Research
- Research Center Rossendorf Inc., Dresden (Germany). Inst. of Ion Beam Physics and Materials Research
- Technical Univ. of Ilmenau (Germany). Inst. of Solid State Electronics
Solid solutions of SiC and III-V compound semiconductors are recognized as promising materials for novel semiconductor applications. This paper reports on experiments which explore the possibility of synthesizing thin buried layers of (SiC){sub 1{minus}x}(AlN){sub x} having composition of about x = 0.2 by co-implanting N{sup +} and Al{sup +} ions into 6H-SiC wafers maintained at temperatures in the range 200--800 C. Structural and compositional evaluation of as-implanted samples was carried out using a combination of Rutherford backscattering/channelling spectrometry and infrared reflectance spectroscopy. It is shown that the structures are highly sensitive to the substrate temperature. The use of sufficiently high temperatures (400--800 C) enables the crystallinity of the host material as well as relatively low damage levels to be maintained during implantation. The formation of Al-N bonds within the implanted layers is also confirmed over the temperature range studied.
- OSTI ID:
- 549785
- Report Number(s):
- CONF-961202-; ISBN 1-55899-342-8; TRN: IM9752%%8
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of Materials modification and synthesis by ion beam processing; Alexander, D.E. [ed.] [Argonne National Lab., IL (United States)]; Cheung, N.W. [ed.] [Univ. of California, Berkeley, CA (United States)]; Park, B. [ed.] [Georgia Inst. of Tech., Atlanta, GA (United States)]; Skorupa, W. [ed.] [Research Center Rossendorf, Inc., Dresden (Germany)]; PB: 748 p.; Materials Research Society symposium proceedings, Volume 438
- Country of Publication:
- United States
- Language:
- English
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