15% efficiency (1 sun, air mass 1. 5), large-area, 1. 93 eV Al/sub x/Ga/sub 1-//sub x/As (x = 0. 37) n-p solar cell grown by metalorganic vapor phase epitaxy

Journal Article · Mon Feb 22 00:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99387· OSTI ID:5491387

Chung, B; Hamaker, H C; Virshup, G F; Werthen, J G

1.93 eV Al/sub x/Ga/sub 1-//sub x/As (x = 0.37) n-p solar cells with areas of 4 cm/sup 2/ have been fabricated by metalorganic vapor phase epitaxy. Under 1 sun, air mass 1.5, simulated conditions, the cell exhibiting a conversion efficiency as high as 15% is characterized by a short-circuit current density of 12.0 mA/cm/sup 2/, an open-circuit voltage of 1.42 V, and a fill factor of 0.87. The realization of these high-quality AlGaAs solar cells at a band gap of 1.93 eV implies the potential for other promising optoelectronic devices in the visible spectrum.

• Research Organization: Varian Research Center, Device Laboratory, Palo Alto, California 94303
• OSTI ID: 5491387
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 52:8
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ALUMINIUM ARSENIDE SOLAR CELLS
CURRENT DENSITY
EFFICIENCY
FABRICATION
ALUMINIUM ARSENIDES
VAPOR PHASE EPITAXY
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
ELECTRICAL FAULTS
EXPERIMENTAL DATA
ORGANOMETALLIC COMPOUNDS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
DIRECT ENERGY CONVERTERS
EPITAXY
EQUIPMENT
GALLIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
ORGANIC COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion