Enhanced electron spin polarization in photoemission from thin GaAs

Journal Article · Mon Oct 16 00:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102236· OSTI ID:5490161

Maruyama, T; Prepost, R ^[1]; Garwin, E L ^[2]; Sinclair, C K ^[3]; Dunham, B ^[4]; Kalem, S ^[5]

---

1. Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (US)
2. Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309
3. Continuous Electron Beam Accelerator Facility, Newport News, Virginia 23606
4. Nuclear Physics Laboratory and Department of Physics, University of Illinois, Champaign, Illinois 61820
5. Coordinated Science Laboratory, University of Illinois, Urbana, Illinois

The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2-{mu}m-thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9-{mu}m-thick GaAs sample.

• DOE Contract Number: AC02-76ER00881; AC03-76SF00515; AC05-84ER40150
• OSTI ID: 5490161
• Journal Information: Applied Physics Letters; (USA), Vol. 55:16; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHOTOEMISSION
ELECTRONS
EXPERIMENTAL DATA
MOLECULAR BEAM EPITAXY
POLARIZATION
THICKNESS
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
DATA
DIMENSIONS
ELEMENTARY PARTICLES
EMISSION
EPITAXY
FERMIONS
FILMS
GALLIUM COMPOUNDS
INFORMATION
LEPTONS
NUMERICAL DATA
PNICTIDES
SECONDARY EMISSION
360603* - Materials- Properties