End-of-life aspects of BSF technology for thin silicon solar cells

Conference · Wed Sep 01 04:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5490052

Rasch, K D; Roy, K; Tentscher, K H

A matrix of solar cells (100 and 200 microns, 10 ohm-cm crucible grown) was fabricated to identify BSF technology with highest effectiveness under BOL and EOL conditions. The BSF structure was formed by boron diffusion, boron ion implantation, evaporated aluminium alloying and screen printed aluminium firing. The BOL and EOL characteristics after electron irradiation at fluences up to 1 x 10/sup 15/ e/cm/sup 2/ are presented. Highest open-circuit voltage shows the boron diffused BSF cell. Best BOL and EOL power can be obtained by boron diffused or implanted BSF cells. Blue and red response can be affected by inadequate cell processing. This leads to an enhanced degradation of power output in a radiation environment.

• Research Organization: Aeg-Tellefunken Heilbronn
• OSTI ID: 5490052
• Report Number(s): CONF-820906-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
ALUMINIUM ALLOYS
APPROPRIATE TECHNOLOGY
BORON
CRYSTAL GROWTH
DIFFUSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC POTENTIAL
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
FERMIONS
ION IMPLANTATION
IRRADIATION
LEPTONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATION EFFECTS
SEMIMETALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TECHNOLOGY ASSESSMENT