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Effects of 1 MeV electrons and 10 MeV protons on the performance and reflectance of thin BSR cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5155708
; ;
Thin silicon cells with BSR's were irradiated with 1 MeV electrons on either the front or back side of the cell. There were two types of cells, a 10 ohm-cm with a BSF and a 0.15 ohm-cm without a BSF. Data on the electrical performance and reflectance are given for various fluence levels of 1 MeV electrons for both type cells and 10 MeV protons for the 10 ohm-cm cell.
Research Organization:
NASA Lewis Research Center, Cleveland, Ohio
OSTI ID:
5155708
Report Number(s):
CONF-840561-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BACK CONTACT SOLAR CELLS
BARYONS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ENERGY RANGE
EQUIPMENT
FERMIONS
HADRONS
IRRADIATION
LEPTONS
MEV RANGE
MEV RANGE 01-10
NUCLEONS
OPTICAL PROPERTIES
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PROTONS
REFLECTIVITY
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE PROPERTIES