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U.S. Department of Energy
Office of Scientific and Technical Information

Amorphous silicon technology-1990

Conference ·
OSTI ID:5488563
 [1];  [2];  [3];  [4];  [5]
  1. Univ. of Utah, Salt Lake City, UT (US)
  2. Xerox PARC, Palo Alto, CA (US)
  3. Univ. of Dundee, Dundee (GB)
  4. Osaka Univ., Osaka (JP)
  5. Solar Energy Research Inst., Golden, CO (US)
The topics covered in this volume include recent advances in solar cells and modules, measurements and calculations of the bulk and interface densities of states in a-Si:H and related alloys, the electrical characterization of thin film transistors (TFT's) including stability issues, the use of a-Si:H for various optical devices, some novel device applications, the growth and characterization of a-Si:H and related alloys, transport properties of a-Si:H and related alloys, and the stability of these alloys. The volume is organized into eleven parts which parallel the sessions at the conference. This book highlights recent improvements in solar cell modules, optical devices such as image sensors, the stability of thin-film transistors (TFT's), the growth of narrow-gap alloys based on amorphous silicon, novel growth techniques, modeling of the structure and effects in hydrogenated amorphous silicon (a-Si:H), and the basic understanding of metastabilities in a-Si:H. Also included in the volume are several very novel device applications of the a-Si:H technology, such as ultraviolet and x-ray detectors, medical imaging detectors and high energy particle detectors.
OSTI ID:
5488563
Report Number(s):
CONF-900466--; ISBN: 1-55899-081-X
Country of Publication:
United States
Language:
English