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Low-temperature physical properties of R sub 5 Ir sub 4 Si sub 10 ( R =Dy, Ho, Er, Tm, and Yb) compounds

Journal Article · · Physical Review, B: Condensed Matter; (USA)
 [1]; ;  [2]
  1. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan 80424, Republic of China (TW)
  2. Department of Physics, University of California, Davis, California 95616 (USA)
Results on the static magnetic susceptibility and dc electrical resistivity of {ital R}{sub 5}Ir{sub 4}Si{sub 10} ({ital R}=Dy--Yb) compounds are presented. In addition, measurements of the ac magnetic susceptibility and resistivity at high pressure and heat capacity for Tm{sub 5}Ir{sub 4}Si{sub 10} are also reported. Magnetic-ordering temperatures for these isostructural compounds range from 0.8 to 5 K, with Tm{sub 5}Ir{sub 4}Si{sub 10} displaying two magnetic transitions. All these compounds exhibit an anomalous temperature dependence of the resistivity which may be attributed to charge-density-wave formation.
DOE Contract Number:
W-7405-ENG-82
OSTI ID:
5487659
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:10; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English