The plasma oxidation of titanium thin films to form dielectric layers
- Philips Components Southampton, Millbrook Trading Estate, Southampton, Hampshire SO9 7BH, United Kingdom (GB)
A remote indicatively coupled radio frequency plasma has been used to oxidize titanium thin films evaporated onto silicon substartes. The substrate was heated during oxidation to temperatures between 200 and 500 {degree}C using a resistively heated furance. Titanium dioxide layers were formed of thicknesses from 53 to 150 nm. The crystal structure was shown to be rutile by x-ray diffraction for oxidation temperatures of 500 {degree}C. These samples were also seen to have a thin interfacial silicon dioxide layer. Measurements on 1-mm Al dot capacitors showed the leakage current of a 53-nm film oxidized at 500 {degree}C to be below 10{sup {minus}8} A at a 2-V bias. Good capacitance-voltage characteristics were observed for high oxidation temperatures, with a dielectric constant of between 15 and 22 for the TiO{sub 2}/SiO{sub 2} layers. The refractive index of the layers was measured by ellipsometry to be 2.5--2.6. Plasma oxidation thus provides a low-temperature method of forming titanium dixoide thin films.
- OSTI ID:
- 5485428
- Journal Information:
- Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:6; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
CHALCOGENIDES
CHEMICAL REACTIONS
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIELECTRIC MATERIALS
DIFFRACTION
ELEMENTS
ELLIPSOMETRY
FILMS
MATERIALS
MEASURING METHODS
METALS
OPTICAL PROPERTIES
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
REFRACTIVITY
SCATTERING
SEMIMETALS
SILICON
SUBSTRATES
SYNTHESIS
THIN FILMS
TITANIUM
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
X-RAY DIFFRACTION