Rutile-structured TiO{sub 2} deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

Journal Article · Tue Jan 14 23:00:00 EST 2014 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4843515· OSTI ID:22258671

Pointet, John; Gonon, Patrice; Latu-Romain, Lawrence; Bsiesy, Ahmad; Vallée, Christophe ^[1]

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1. Microelectronics Technology Laboratory (LTM), Joseph Fourier University (UJF) and French National Center for Scientific Research - CNRS, CEA – LETI MINATEC, 17 Avenue des Martyrs, 38054 Grenoble Cedex 9 (France)

In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.

• OSTI ID: 22258671
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 1 Vol. 32; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITORS
DEPOSITION
DEPOSITS
ELECTRODES
LEAKAGE CURRENT
PERMITTIVITY
PLASMA
RUTHENIUM
RUTILE
THIN FILMS
TITANIUM
TITANIUM OXIDES