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Stability of the YBa sub 2 Cu sub 3 O sub 7 minus sub x --Si interface

Journal Article · · Journal of Materials Research; (United States)
;  [1]
  1. Department of Physics and Center for Superconductivity Research, The University of Maryland, College Park, Maryland (USA)
Electron spectroscopies were used to study the reaction of Si and SiO{sub 2} layers with high-{ital T}{sub {ital c}} superconductors at room temperature and under annealing conditions. The superconductor samples include YBa{sub 2}Cu{sub 3}O{sub 7} ceramic and thin film samples as well as GdBa{sub 2}Cu{sub 3}O{sub 7} ceramic samples. The results show that the Si overlayers withdraw oxygen from the superconductor and form an interfacial layer of Si oxide at room temperature. Annealing increases the reaction rate so that films as thick as 30 A become completely oxidized following annealing above approximately 100 {degree}C. Ba segregates to the surface from the bulk after Si oxidation when annealed at temperatures higher than 200 {degree}C, while the rare earth element (Gd) does not segregate.
OSTI ID:
5480853
Journal Information:
Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 6:8; ISSN JMREE; ISSN 0884-2914
Country of Publication:
United States
Language:
English