Optically induced conductivity changes in discharge-produced hydrogenated amorphous silicon

Journal Article · Sun Jun 01 00:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328084· OSTI ID:5457241

Staebler, D L; Wronski, C R

Long exposure to light decreases the photoconductivity and dark conductivity of some samples of hydrogenated amorphous silicon (a-Si : H). Annealing above approx.150 /sup 0/C reverses the process. The effect occurs in the bulk of the films, and is associated with changes in density or occupation of deep gap states. High concentrations of P, B, or As quench the effect. Possible models involving hydrogen bond reorientation at a localized defect or electron-charge transfer between defects are discussed. An example is shown where these conductivity changes do not affect the efficiency of an a-Si : H solar cell.

• Research Organization: RCA Laboratories, Princeton, New Jersey 08540
• DOE Contract Number: EY-76-C-03-1286
• OSTI ID: 5457241
• Journal Information: J. Appl. Phys.; (United States), Vol. 51:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
SILICON
ELECTRIC CONDUCTIVITY
SILICON SOLAR CELLS
ANNEALING
CRYSTAL DEFECTS
EFFICIENCY
ELECTRIC DISCHARGES
ELECTRONS
ENERGY GAP
FILMS
HIGH TEMPERATURE
HYDROGEN
MATHEMATICAL MODELS
ORIENTATION
PHOTOCONDUCTIVITY
QUANTITY RATIO
RADIATION EFFECTS
SCINTILLATION QUENCHING
SEMICONDUCTOR MATERIALS
CRYOGENIC FLUIDS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ELEMENTS
EQUIPMENT
FERMIONS
FLUIDS
HEAT TREATMENTS
LEPTONS
MATERIALS
NONMETALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
360603* - Materials- Properties
140501 - Solar Energy Conversion- Photovoltaic Conversion