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U.S. Department of Energy
Office of Scientific and Technical Information

Amorphous silicon solar cells. Quarterly report No. 3, January 1--March 31, 1977

Technical Report ·
OSTI ID:6070869
A detailed study of the photoluminescence, photoconductivity, and infrared absorption of discharge-produced a-Si has shown the optimum substrate temperature to be approx. 300 to 350/sup 0/C. The photovoltaic properties of a-Si solar cells are also optimized by deposition of the a-Si in this temperature range. The out-diffusion of hydrogen apparently creates defect states such as dangling bonds when the substrate temperature exceeds approx. 350/sup 0/C. The concentration of bonded hydrogen increases as the power is increased in a rf(E) electrodeless discharge in SiH/sub 4/. The dark conductivity and photoconductivity decrease significantly as the power increases. In general, both the dark conductivity and the photoconductivity of a-Si films depend on the thermal and optical history. Exposure to light causes the dark conductivity and photoconductivity to decrease; these changes can be reversed by annealing for a few minutes at temperatures approx. > 150/sup 0/C. Amorphous-silicon solar cells have been fabricated with fill factors as high as 0.674. These cells exhibited space charge densities of 1.5 x 10/sup 15//cm/sup 3/ in the dark and 2.5 x 10/sup 16//cm/sup 3/ in AM1 illumination. Although the best conversion efficiency to date is approx. 5.5%, the product of the best values of V/sub oc/, J/sub sc/, and the factor yields approx. 8%.
Research Organization:
RCA Labs., Princeton, NJ (USA)
OSTI ID:
6070869
Report Number(s):
SAN-1286-3
Country of Publication:
United States
Language:
English