Effect of added acetylene on the rf discharge chemistry of C/sub 2/F/sub 6/. A mechanistic model for fluorocarbon plasmas

Journal Article · Thu May 01 04:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.327961· OSTI ID:5453578

Truesdale, E A; Smolinsky, G; Mayer, T M

The effect of added acetylene on the rf discharge chemistry of C/sub 2/F/sub 6/ was studied as a function of acetylene concentration. The principle products are HF, CF/sub 4/, CHF/sub 3/, C/sub 2/F/sub 4/, and CF/sub 2/ as determined by mass spectrometry. Under conditions typically used for etching SiO/sub 2/, residence time and power density control the amount of conversion of feed gas to products. Large amounts of polymeric material, with composition (CF)/sub n/, are formed in the discharge zone. A chemical model for fluorocarbon discharges is proposed, which assumes an equilibrium between dissociation and recombination of fluorocarbon fragments and fluorine atoms. Polymerization and selective etching of Si and SiO/sub 2/ in fluorocarbon dishcarges containing oxygen or hydrogen additives is interpreted in terms of the proposed model.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5453578
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

70 PLASMA PHYSICS AND FUSION TECHNOLOGY
700102* -- Fusion Energy-- Plasma Research-- Diagnostics
ACETYLENE
ALKYNES
CARBON COMPOUNDS
CARBON FLUORIDES
CHALCOGENIDES
CHEMICAL REACTIONS
DISSOCIATION
ELECTRIC DISCHARGES
EQUILIBRIUM
ETCHING
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HYDROCARBONS
MASS SPECTROSCOPY
MATHEMATICAL MODELS
ORGANIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PLASMA
POLYMERS
QUANTITY RATIO
RECOMBINATION
SILICON COMPOUNDS
SILICON OXIDES
SPECTROSCOPY
SURFACE FINISHING