Effect of Screening on Shot Noise in Diffusive Mesoscopic Conductors

Journal Article · Fri Oct 31 23:00:00 EST 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.79.3482· OSTI ID:544985

Naveh, Y; Averin, D V; Likharev, K K ^[1]

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1. Department of Physics, State University of New York, Stony Brook, New York 11794-3800 (United States)

Shot noise in diffusive mesoscopic conductors, at finite observation frequencies {omega} (comparable to the reciprocal Thouless time {tau}{sup {minus}1}{sub T} ), is analyzed with an account of screening. At low frequencies, the well-known result S{sub I}({omega})=2eI/3 is recovered. This result is valid at arbitrary {omega}{tau}{sub T} for wide conductors longer than the screening length. However, at least for two very different systems, namely, wide and short conductors, and thin conductors over a close ground plane, noise approaches a different fundamental level, S{sub I}({omega})=eI , at {omega}{tau}{sub T}{gt}1 . {copyright} {ital 1997} {ital The American Physical Society}

• DOE Contract Number: FG02-95ER14575
• OSTI ID: 544985
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 18 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ELECTRIC CONDUCTORS
FREQUENCY DEPENDENCE
METALS
NOISE
SCREENING
SEMICONDUCTOR MATERIALS
TWO-DIMENSIONAL CALCULATIONS