Ferroelectric memories

Journal Article · Fri Dec 15 04:00:00 EST 1989 · Science (Washington, D.C.); (United States)

DOI:https://doi.org/10.1126/science.246.4936.1400· OSTI ID:5447269

Scott, J F ^[1]; Paz de Araujo, C A ^[2]

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1. Univ. of Colorado, Boulder (USA)
2. Univ. of Colorado, Colorado Springs (USA)

In the past year it has become possible to fabricate ferroelectric thin-film memories onto standard silicon integrated circuits that combine very high speed (30-nanosecond read/erase/rewrite operation), 5-volt standard silicon logic levels, very high density (2 by 2 micrometer cell size), complete nonvolatility (no standby power required), and extreme radiation hardness. These ferroelectric random-access memories are expected to replace magnetic core memory, magnetic bubble memory systems, and electrically erasable read-only memory for many applications. The switching kinetics of these films, 100 to 300 nanometers thick, are now well understood, with switching times that fit an activation field dependence that scales applied field and temperature. Earlier problems of fatigue and retention failure are also now understood and have been improved to acceptable levels.

• OSTI ID: 5447269
• Journal Information: Science (Washington, D.C.); (United States), Journal Name: Science (Washington, D.C.); (United States) Vol. 246:4936; ISSN SCIEA; ISSN 0036-8075
• Country of Publication: United States
• Language: English

Related Subjects

99 GENERAL AND MISCELLANEOUS
990200* -- Mathematics & Computers
COMPUTERS
DESIGN
DIMENSIONS
ELECTRONIC CIRCUITS
FABRICATION
FATIGUE
FERROELECTRIC MATERIALS
FILMS
INTEGRATED CIRCUITS
MECHANICAL PROPERTIES
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
OPTIMIZATION
SIZE
TECHNOLOGY ASSESSMENT
THICKNESS
THIN FILMS