Synthesis of GaN nanocrystals by sequential ion implantation

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118850· OSTI ID:544510

Wolk, J A; Yu, K M; Bourret-Courchesne, E D ^[1]; Johnson, E ^[2]

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1. Center for Advanced Materials, Materials Sciences Division, E. O. Lawrence Berkeley National Laboratory, MS 2-200, University of California, Berkeley, California 94720 (United States)
2. National Center for Electron Microscopy, Materials Sciences Division, E. O. Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States)

We have synthesized GaN nanocrystals by sequential implantation of Ga and N ions into a sapphire substrate followed by a postimplantation anneal. The nanocrystals have been identified as the wurtzite phase {alpha}-GaN structure by transmission electron microscopy. We also found that the nanocrystals are aligned with the sapphire following the relationship: (0001){sub sapphire}{parallel}(0001){sub GaN} and (11{bar 2}0){sub sapphire}{parallel}(11{bar 2}0){sub GaN}. The use of a sapphire substrate allows for the measurements of optical properties, and near band-edge luminescence and the yellow band are observed in photoluminescence spectroscopy.

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 544510
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 70; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL STRUCTURE
GALLIUM NITRIDES
ION IMPLANTATION
PHOTOLUMINESCENCE
SAPPHIRE
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY
nanostructured materials