High characteristic voltages in Nb/p-type InAs/Nb Josephson junctions

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119116· OSTI ID:544372

Chrestin, A; Merkt, U ^[1]

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1. Universitaet Hamburg, Institut fuer Angewandte Physik und Zentrum fuer Mikrostrukturforschung, D-20355 Hamburg (Germany)

An investigation of superconductor/semiconductor/superconductor Josephson junctions with separations between the Nb superconducting electrodes down to 20 nm is presented. To achieve such short distances, a preparation technique employing an anodic Nb oxide film as a spacer has been developed. The Nb electrodes are coupled through the quasi two-dimensional electron gas in the native inversion layer at the surface of p-type InAs. High characteristic voltages up to 1.35 mV at T=2 K are observed. A sensitive dependence of the magnitude of the characteristic voltage on interface quality is demonstrated. Good agreement is found between the experimental temperature dependence of the critical current and a theoretical model valid for short weak links. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 544372
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
CRITICAL CURRENT
INDIUM ARSENIDES
INDIUM COMPOUNDS
JOSEPHSON EFFECT
JOSEPHSON JUNCTIONS
NIOBIUM
OXIDATION
SUPERCONDUCTING JUNCTIONS
TEMPERATURE DEPENDENCE