Neutron irradiation effects on the infrared absorption of the EL2 defect in GaAs: New interpretation for the intracenter transition
The effect of neutron irradiation on the optical properties of the EL2 center in semi-insulating GaAs was studied using the infrared absorption technique. The results show that the absorption band known as the intracenter transition between 1.03 and 1.27 eV is decreased by neutron irradiation. This absorption band is interpreted as a charge-transfer transition between the As/sub Ga/ antisite and an X component(s) assuming that EL2equivalentAs/sub Ga/+X. The neutron irradiation increases the As/sub Ga/ antisite concentration and reduces the EL2 concentration. The reduction of the EL2 concentration is due to the decrease of the X-component concentration. The zero-phonon line observed at 1.039 eV may not be an internal optical excitation within the isolated As/sub Ga/ antisite.
- Research Organization:
- Systran Corporation, 4126 Linden Avenue, Dayton, Ohio 45432
- OSTI ID:
- 5443219
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 37:11; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ABSORPTION SPECTRA
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
E CENTERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFRARED SPECTRA
MONOCRYSTALS
NEUTRON BEAMS
NUCLEON BEAMS
OPTICAL PROPERTIES
PARTICLE BEAMS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
SPECTRA
VACANCIES