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Title: Exchange anisotropy in polycrystalline and epitaxial (001)-oriented NiO/NiFe bilayers grown by ion beam sputtering (abstract)

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.364602· OSTI ID:544298
;  [1];  [2]
  1. Lawrence Livermore National Lab, Livermore, California 94550 (United States)
  2. Stanford University, Palo Alto, California 94305 (United States)

The connection between the spin structure of antiferromagnetic NiO and the exchange anisotropy observed in NiO/NiFe bilayers is not well understood. For instance, the NiO bulk-terminated (001) surface is compensated, and therefore simple models predict no exchange bias in (001)-oriented NiFe/NiO bilayers. Using a newly developed ion-beam sputtering (IBS) process to deposit NiO exchange-coupled films, we have simultaneously grown polycrystalline and epitaxial NiO/NiFe bilayers. NiO grown on NiFe/MgO is polycrystalline, while NiO grown directly on MgO is epitaxial. The in-plane orientation of the epilayers was confirmed using (hk0) x-ray diffraction. The exchange anisotropy in epitaxial (001)-oriented bilayers is about half as large as that observed in polycrystalline bilayers. The size of the exchange anisotropy does not depend on the orientation of the bias field with respect to the in-plane NiFe/NiO crystallographic direction, indicating that the same interfacial spin structure is achieved regardless of the bias field direction. These results show that the surface NiO spin structure is different from that of the bulk, and is uncompensated at the interface independent of the crystalline orientation of the bilayer. Results on epitaxial Co/NiO and NiFe/NiCoO bilayers will also be discussed. {copyright} {ital 1997 American Institute of Physics.}

Research Organization:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
544298
Report Number(s):
CONF-961141-; ISSN 0021-8979; TRN: 9709M0300
Journal Information:
Journal of Applied Physics, Vol. 81, Issue 8; Conference: 41. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 12-15 Nov 1996; Other Information: PBD: Apr 1997
Country of Publication:
United States
Language:
English