Finite element computation of the hydrodynamic model of semiconductor devices
- Univ. of Minnesota Army High Performance Computing Research Center, Minneapolis, MN (United States)
- Univ. of Minnesota, Minneapolis, MN (United States)
- Northwestern Univ., Evanston, IL (United States)
- Brown Univ., Providence, RI (United States)
A finite element method, based on the use of a standard mixed finite element method for the electric field and a Runge-Kutta discontinuous Galerkin (RKDG) method for the hyperbolic system of conservation laws for the electron density, the momentum density, and the energy density, is introduced to numerically solve the hydrodynamic model equations for semiconductor devices in two space dimensions. The hydrodynamic model takes into account the first two moments of the Boltzmann equation, and nonlocal effects, such as velocity overshoot in response to rapid variations of the electric field, and hot electron effects, such as impact ionization. Extensive numerical results are shown to test the performance of the finite element method for a MESFET device.
- OSTI ID:
- 54408
- Report Number(s):
- DOE/ER/25151--1-Vol.1; CONF-930331--Vol.1
- Country of Publication:
- United States
- Language:
- English
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