Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation

Journal Article · Sat Dec 31 23:00:00 EST 1994 · VLSI Design

DOI:https://doi.org/10.1155/1995/47065· OSTI ID:1197937

Chen, Zhangxin ^[1]; Cockburn, Bernardo ^[2]; Jerome, Joseph W. ^[3]; Shu, Chi-Wang ^[4]

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1. Department of Mathematics and the Institute for Scientific Computation, Texas A&M University, College Station, TX 77843, USA
2. School of Mathematics, , University of Minnesota, Minneapolis, Minnesota 55455, USA
3. Department of Mathematics, Northwestern University, Evanston, IL 60208, USA
4. Division of Applied Mathematics, Brown University, Providence, RI 02912, USA

In this paper we introduce a new method for numerically solving the equations of the hydrodynamic model for semiconductor devices in two space dimensions. The method combines a standard mixed finite element method, used to obtain directly an approximation to the electric field, with the so-called Runge-Kutta Discontinuous Galerkin (RKDG) method, originally devised for numerically solving multi-dimensional hyperbolic systems of conservation laws, which is applied here to the convective part of the equations. Numerical simulations showing the performance of the new method are displayed, and the results compared with those obtained by using Essentially Nonoscillatory (ENO) finite difference schemes. From the perspective of device modeling, these methods are robust, since they are capable of encompassing broad parameter ranges, including those for which shock formation is possible. The simulations presented here are for Gallium Arsenide at room temperature, but we have tested them much more generally with considerable success.

• Sponsoring Organization: USDOE
• OSTI ID: 1197937
• Journal Information: VLSI Design, Journal Name: VLSI Design Journal Issue: 2 Vol. 3; ISSN 1065-514X
• Publisher: Hindawi Publishing Corporation
• Country of Publication: Country unknown/Code not available
• Language: English