Spontaneous polarization and piezoelectric constants of III-V nitrides

Journal Article · Wed Oct 01 00:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.56.R10024· OSTI ID:543833

Bernardini, F; Fiorentini, V ^[1]; Vanderbilt, D ^[2]

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1. INFM, Dipartimento di Scienze Fisiche, Universita di Cagliari, I-09124 Cagliari (Italy)
2. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08845-0849 (United States)

The spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied {ital ab initio} using the Berry-phase approach to polarization in solids. The piezoelectric constants are found to be up to ten times larger than in conventional III-V and II-VI semiconductor compounds, and comparable to those of ZnO. Further properties at variance with those of conventional III-V compounds are the sign of the piezoelectric constants (positive as in II-VI compounds) and the very large spontaneous polarization. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 543833
• Journal Information: Physical Review, B: Condensed Matter, Vol. 56, Issue 16; Other Information: PBD: Oct 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
PIEZOELECTRICITY
GALLIUM NITRIDES
INDIUM NITRIDES
POLARIZATION
DIELECTRIC PROPERTIES