Investigation of hydrogen induced changes in SrBi{sub 2}Ta{sub 2}O{sub 9} ferroelectric films

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.366179· OSTI ID:543780

Zafar, S; Kaushik, V; Laberge, P; Chu, P; Jones, R E; Hance, R L; Zurcher, P; White, B E; Taylor, D; Melnick, B; Gillespie, S ^[1]

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1. Materials Research and Strategic Technologies, Motorola, 3501 Ed Bluestein Boulevard, Austin, Texas 78721 (United States)

The effect of hydrogen on strontium bismuth tantalate (SrBi{sub 2}Ta{sub 2}O{sub 9}; SBT) ferroelectric capacitors is investigated. Using several analytical techniques such as x-ray diffraction, electron diffraction, Auger electron, scanning and transmission electron microscopies, the structural and compositional changes in the ferroelectric film are studied as a function of annealing gas and temperature. The mechanism for hydrogen induced damage to the capacitor is identified. Measurements show that the hydrogen induces both structural and compositional changes in the ferroelectric film. Hydrogen reacts with the bismuth oxide to form bismuth and the reduced bismuth diffuses out of the SBT film causing the electrodes to peel. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 543780
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
AUGER EFFECT
BISMUTH COMPOUNDS
BISMUTH OXIDES
CHEMICAL COMPOSITION
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
FERROELECTRIC MATERIALS
HYDROGEN ADDITIONS
SCANNING ELECTRON MICROSCOPY
STOICHIOMETRY
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
STRUCTURAL CHEMICAL ANALYSIS
TANTALUM OXIDES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION