Energy loss and straggling for 50- and 100-keV H{sup +} ions passing through the Si(001)2{times}1-Sb surface

Journal Article · Mon Sep 01 04:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.56.7011· OSTI ID:542634

Sumitomo, K; Nishioka, T ^[1]; Ikeda, A; Kido, Y ^[2]

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1. NTT Basic Research Laboratories, Atsugi, Kanagawa 243-01 (Japan)
2. Department of Physics, Ritsumeikan University, Kusatsu, Shiga 525-77 (Japan)

Surface stopping powers were measured for 50- and 100-keV H{sup +} ions passing through the Si(001)2{times}1-Sb surface. The energy losses as a function of the exit angle are fit successfully by a simple relationship involving the time spent near the surface. The fitting parameter is in agreement with the value expected from the bulk Sb stopping cross section and the areal Sb density. This result suggests continuity of the stopping power from the bulk to the surface. It provides a useful method for determining the distance between the plane of deposited atoms and of a substrate surface and for measuring the composition of the topmost atomic layer. The estimated energy loss by surface-plasmon excitation is negligibly small in the present system. The energy straggling as a function of exit angle was also measured for 50- and 100-keV H{sup +} incidence and the results are compared here with the bulk straggling values. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 542634
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 11 Vol. 56; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ADSORPTION
ANTIMONY
DEPOSITION
ENERGY LOSSES
EXCITATION
HYDROGEN IONS 1 PLUS
ION COLLISIONS
KEV RANGE 10-100
PLASMONS
SILICON
STOICHIOMETRY
STOPPING POWER