Free-carrier absorption from Fibonacci sequences of. delta. -doped layers in silicon

Journal Article · Fri Sep 15 00:00:00 EDT 1989 · Physical Review (Section) B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.40.6218· OSTI ID:5421853

Sernelius, B E ^[1]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (US) Department of Physics, University of Tennessee, Knoxville, Tennessee 37996 Department of Physics and Measurement Technology, University of Linkoping, S-58183 Linkoping, Sweden

Theoretical results are reported for the dynamical resistivity and free-carrier absorption from Fibonacci sequences of {delta}-doped layers in silicon. Distinct peaks develop, with increasing generation number, in the region of plasmon excitations and the spectra show self-similarity properties. Numerical results are presented for sequences with generation numbers 5, 10, and 15, corresponding to a total number of layers approximately equal to 10, 100, and 1000, respectively.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5421853
• Journal Information: Physical Review (Section) B: Condensed Matter; (USA), Vol. 39:9; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
DIELECTRIC TENSOR
OPTICAL PROPERTIES
PLASMONS
SUPERLATTICES
ELECTRICAL PROPERTIES
ELEMENTS
PHYSICAL PROPERTIES
QUASI PARTICLES
SEMIMETALS
TENSORS
360603* - Materials- Properties