Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy
- Moscow State University, Faculty of Physics (Russian Federation)
- Moscow State University, Faculty of Materials Science (Russian Federation)
- Bruker Ltd (Russian Federation)
Attenuated total reflection infrared spectroscopy is used to determine the free charge carrier concentration in arrays of silicon nanowires with characteristic transverse sizes of 50–100 nm and a length of the order of 10 μm formed on lightly doped crystalline p-type silicon by metal-assisted chemical etching and subjected to the additional thermal-diffusion doping of boron at temperatures of 850–1000°C. It is found that the free hole concentration in arrays varies from 5 × 10{sup 18} to 3 × 10{sup 19} cm{sup –3} depending on the annealing temperature and is maximal at temperatures of 900–950°C. These results can be used to extend the range of potential application of silicon nanowires in photonics, sensorics, and thermoelectric power converters.
- OSTI ID:
- 22944762
- Journal Information:
- Semiconductors (Woodbury, N.Y., Print), Vol. 53, Issue 11; Other Information: Copyright (c) 2019 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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