Charge transfer between ground-state Si{sup 3+} and He at electron-volt energies
- Department of Physics, University of Nevada, Las Vegas, 4505 Maryland Parkway, Las Vegas, Nevada 89154 (United States)
The charge-transfer rate coefficient for the reaction Si{sup 3+}(3s{sup 2}S)+He{r_arrow}products is measured by means of a combined technique of laser ablation and ion storage. A cylindrical radio-frequency ion trap was used to store Si{sup 3+} ions produced by laser ablation of solid silicon targets. The rate coefficient of the reaction was derived from the decay rate of the ion signal. The measured rate coefficient is 6.27{sub {minus}0.52}{sup +0.68}{times}10{sup {minus}10}cm{sup 3}s{sup {minus}1} at T{sub equiv}=3.9{times}10{sup 3}K. This value is about 30{percent} higher than the Landau-Zener calculation of Butler & Dalgarno and is larger by about a factor of 3 than the recent full quantal calculation of Honvault {ital et al.} {copyright} {ital 1997} {ital The American Astronomical Society}
- DOE Contract Number:
- FG02-91ER75667
- OSTI ID:
- 542142
- Journal Information:
- Astrophysical Journal, Journal Name: Astrophysical Journal Journal Issue: 1 Vol. 483; ISSN ASJOAB; ISSN 0004-637X
- Country of Publication:
- United States
- Language:
- English
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