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YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} trilayer junction with nm thick PrGaO{sub 3} barrier

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.119968· OSTI ID:542132
; ; ;  [1]; ;  [2];  [3]
  1. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, Kanagawa 226 (Japan)
  2. Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 (Japan)
  3. Materials and Structures Laboratory, Tokyo Institute of Technology and CREST-Japan Science and Technology Corporation, 4259 Nagatsuta, Midori, Yokohama, Kanagawa 226 (Japan)

We have established a deposition process of high quality a axis oriented YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} (a-YBCO) and insulating epitaxial PrGaO{sub 3} (PGO) films to fabricate a-YBCO/PGO(2.0{endash}3.2 nm)/a-YBCO trilayer junction. The precipitate formation on the bottom a-YBCO was greatly suppressed by the atomic layer modification of the substrate surface with a wet etching and successive atomic layer epitaxy of SrO and BaO atomic layers prior to the YBCO deposition. Crack formation and residual stress in the film due to the thermal expansion mismatch along c axis of YBCO could be eliminated by inserting a buffer layer of a-YBCO deposited with changing the substrate temperature from 580 to 735{degree}C. The junctions showed a clear hysteresis with its current jump as large as 30{percent}, together with the Fraunhofer diffraction. {copyright} {ital 1997 American Institute of Physics.}

OSTI ID:
542132
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 71; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English