Microstructural study of growth of a YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}}/LaAlO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} trilayered film by pulsed laser deposition
- Department of Materials, Imperial College, London SW7 2BP (United Kingdom)
- Department of Physics, University of Maryland, College Park, Maryland 20742 (United States)
The growth process of an YBCO/LaAlO{sub 3}/YBCO trilayered film made by pulsed laser deposition has been studied by high resolution transmission electron microscopy (HRTEM). The high resolution images of the cross-section samples have shown that a 7 nm layer of LaAlO{sub 3} has been grown epitaxially between {ital c}-axis oriented YBCO layers having the nominal thickness of 250 nm. A stacking fault in the LaAlO{sub 3} layer may introduce a stacking fault into the YBCO layer, which may form nucleation sites for {ital a}-axis oriented grains. A second phase had been formed at the interface between the LaAlO{sub 3} layer and the lower YBCO layer, which has been identified by image simulation and energy dispersive x-ray (EDX) analysis as a new tetragonal La{endash}Al{endash}Cu{endash}O phase based on LaAlO{sub 3} in which some of Al atoms have been replaced by Cu. The approximate lattice parameters of the new phase are {ital a}=0.38 nm and {ital c}=0.76 nm. However, no second phase was found at the interface between the lower YBCO layer and the LaAlO{sub 3} substrate. {copyright} {ital 1996 Materials Research Society.}
- OSTI ID:
- 435159
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 12 Vol. 11; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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