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Structure of amorphous Al sub 2 O sub 3 produced by ion implantation

Conference ·
OSTI ID:5420617

The amorphous state can be produced in {alpha}-Al{sub 2}O{sub 3} by ion beam induced displacements at 77 K or by displacements combined with chemical effects at room temperature. Progress toward understanding the amorphization process has been made from studies of the short-range order, electronic charge on implanted species, and the critical composition for amorphization. Results are presented for implantation of Al + O in the stoichiometric ratio, zirconium, iron, and tin. 10 refs., 6 figs.

Research Organization:
Oak Ridge National Lab., TN (USA)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC05-84OR21400
OSTI ID:
5420617
Report Number(s):
CONF-891119-6; ON: DE90003065
Country of Publication:
United States
Language:
English