Electronic bonding of buried interfaces determined by soft x-ray emission spectroscopy

Journal Article · Sun Oct 15 04:00:00 EDT 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.344079· OSTI ID:5419175

Perera, R C.C. ^[1]; Zhang, C H; Callcott, T A ^[2]; Ederer, D L ^[3]

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1. Center for X-ray Optics, Accelerator and Fusion Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (US)
2. Department of Physics, University of Tennessee, Knoxville, Tennessee 37996
3. Photon Physics Group, National Institute for Standards and Technology, Gaithersburg, Maryland 20899

A nondestructive technique to study the partial density of states of atoms at buried interfaces is presented. A high density of interface atoms has been mimicked by using a periodic multilayer structure. The silicon-carbon interface was used as a test case. Fifty alternating silicon-carbon layers were laid down, in which silicon layers nominally between 3 and 30 A in thickness alternate with carbon layer pairs approximately 30 A thick made by magnetron sputtering. The silicon {ital L}{sub 2,3} emission spectra was excited by monochromatized synchrotron radiation, and the {ital s}-like partial density of states of the silicon valence band was obtained. The spectrum of the thinnest silicon layer is similar to that of silicon as an impurity. When there are approximately two layers of silicon, the spectrum resembles that of silicon carbide, and as the layers become thicker, the spectrum is similar to that of amorphous silicon.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5419175
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 66:8; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CARBON
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION SPECTRA
ENERGY-LEVEL DENSITY
INTERFACES
IONIZING RADIATIONS
LAYERS
NONMETALS
RADIATIONS
SEMIMETALS
SILICON
SPECTRA
SPUTTERING
X RADIATION