Study of buried interfaces by soft x-ray fluorescence spectroscopy excited by synchrotron radiation

Journal Article · Wed May 01 00:00:00 EDT 1996 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.580404· OSTI ID:284652

Ederer, D L ^[1]; Carlisle, J A ^[2]; Jimenez, J ^[1]; Jia, J J; Osborn, K; Callcott, T A ^[3]; Perera, R C; Underwood, J H ^[4]; Terminello, L J; Asfaw, A ^[2]; Himpsel, F J ^[5]

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1. Tulane University, New Orleans, Louisiana 70118 (United States)
2. Lawrence Livermore National Laboratories, Livermore, California 94551 (United States)
3. University of Tennessee, Knoxville, Tennessee 37996 (United States)
4. Advanced Light Source Lawrence Berkeley, Laboratory, Berkeley, California 94720 (United States)
5. IBM, T. J. Watson Center, Yorktown Heights, New York 10598 (United States)

This article is a summary of four different aspects of soft x-ray spectroscopy that are being used or developed by our group to probe the interface. The first is to study the change in valence band fluorescence emission by mimicking a high density of interface atoms through the use of a multilayer. The second method uses an intense localized excited state to characterize the buried interface. The third uses Raman scattering to probe changes in band structure produced by stoichiometric changes in the valence band density of states for atoms at the interface. Finally, a method to study interface atoms by using valence emission from interface atoms that are excited by x-ray standing waves is being developed. {copyright} {ital 1996 American Vacuum Society}

• OSTI ID: 284652
• Report Number(s): CONF-9510385--
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 14; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
BURIED LAYERS
ELECTRONIC STRUCTURE
INTERFACES
RAMAN EFFECT
SOFT X RADIATION
STANDING WAVES
SYNCHROTRON RADIATION
X-RAY FLUORESCENCE ANALYSIS