Ion mixing and thermochemical properties of tracers in Ag

Journal Article · Fri Apr 01 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341018· OSTI ID:5418563

Ma, E; Kim, S; Nicolet, M; Averback, R S

Very thin films of Ni, Ta, W, Pb, and Bi in a Ag matrix were irradiated at 77 K with 330 keV Kr ions at doses from 3 to 7 x 10/sup 15/ ions/cm/sup 2/ and analyzed at room temperature by backscattering of 1.9 MeV He/sup +/. The measured mixing efficiencies, Dt/phiF/sub D/, for the various tracers correlate with their respective tracer impurity diffusion coefficients and impurity-vacancy binding energies in Ag. The results concur with previous ones with a Cu matrix and further support the idea that the parameters that are important for thermal diffusion are also important for ion mixing in a thermal spike.

• Research Organization: Applied Physics and Electrical Engineering, 116-81, California Institute of Technology, Pasadena, California 91125
• OSTI ID: 5418563
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ATOM TRANSPORT
BACKSCATTERING
BISMUTH
CHARGED PARTICLES
COLLISIONS
COPPER
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
ELEMENTS
ENERGY RANGE
IMPURITIES
ION COLLISIONS
IONS
KRYPTON IONS
LEAD
MATERIALS
MATRIX MATERIALS
METALS
MEV RANGE
MIXING
NEUTRAL-PARTICLE TRANSPORT
NICKEL
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RADIATION TRANSPORT
SCATTERING
SILVER
TANTALUM
TRANSITION ELEMENTS
TUNGSTEN
VACANCIES