Radiation melting of semiconductor surface areas through a remote mask

Patent · Tue Feb 09 04:00:00 EST 1988

OSTI ID:5418047

Ridinger, M R

A method for making semiconductor devices including simultaneously selectively heating discrete regions of a semiconductor substrate is described comprising: positioning a mask spaced from a surface of the semiconductor substrate, the mask having regions that are opaque to one type of electromagnetic radiation which type radiation is capable of heating the substrate, and having separate regions that are windows essentially transparent to the one type radiation; positioning an optical beam reducer between the mask and the substrate to demagnify the pattern of the radiation transmitted through the separate mask regions by at least one order of magnitude at the substrate surface; and directing a burst of the one type radiation through the mask at separate regions of the substrate surface corresponding respectively to the separate mask regions to simultaneously momentarily heat and melt the separate substrate surface regions, so that the density of the radiation at the opaque regions of the mask is at least ten times less than the density of the radiation effecting melting at the substrate surface.

• Assignee: Sprague Electric Co., North Adams, MA
• Patent Number(s): US 4724219
• OSTI ID: 5418047
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
BEAM OPTICS
ELECTROMAGNETIC RADIATION
FABRICATION
HEATING
IRRADIATION
MATERIALS
MELTING
PHASE TRANSFORMATIONS
RADIATION HEATING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS