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Computational simulation of diamond chemical vapor deposition in premixed C sub 2 H sub 2 /O sub 2 /H sub 2 and CH sub 4 /O sub 2 strained flames

Conference ·
OSTI ID:5415440
; ;  [1];  [2]
  1. Sandia National Labs., Livermore, CA (United States)
  2. Sandia National Labs., Albuquerque, NM (United States)
We have modeled combustion synthesis of CVD diamond in a stagnation-flow reactor under atmospheric conditions. In this configuration a premixed flat flame flows over a flat deposition substrate that lies perpendicular to the flow and parallel to the burner face. Optimal growth conditions occur when the flame is lifted from the burner surface and stabilized at the deposition surface. A similarity transformation for the stagnation flow field reduces the governing equations to a one-dimensional boundary value problem, thus significantly simplifying the computational task. The simulations include elementary gas-phase and surface chemistry as well as multicomponent molecular transport in the flame gas. Due to increased flame temperature and stability, the C{sub 2}H{sub 2} flames produce much higher growth rates than the CH{sub 4} flames.
Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
DOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-76DR00789
OSTI ID:
5415440
Report Number(s):
SAND-92-8462C; WSS/CI--92-6; CONF-9203140--1; ON: DE92012144
Country of Publication:
United States
Language:
English