Computational simulation of diamond chemical vapor deposition in premixed C{sub 2}H{sub 2}/O{sub 2}/H{sub 2} and CH{sub 4}/O{sub 2} strained flames

Conference · Fri May 01 04:00:00 EDT 1992

OSTI ID:10143170

Meeks, E; Kee, R J; Dandy, D S ^[1]; Coltrin, M E ^[2]

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1. Sandia National Labs., Livermore, CA (United States)
2. Sandia National Labs., Albuquerque, NM (United States)

We have modeled combustion synthesis of CVD diamond in a stagnation-flow reactor under atmospheric conditions. In this configuration a premixed flat flame flows over a flat deposition substrate that lies perpendicular to the flow and parallel to the burner face. Optimal growth conditions occur when the flame is lifted from the burner surface and stabilized at the deposition surface. A similarity transformation for the stagnation flow field reduces the governing equations to a one-dimensional boundary value problem, thus significantly simplifying the computational task. The simulations include elementary gas-phase and surface chemistry as well as multicomponent molecular transport in the flame gas. Due to increased flame temperature and stability, the C{sub 2}H{sub 2} flames produce much higher growth rates than the CH{sub 4} flames.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DR00789
• OSTI ID: 10143170
• Report Number(s): SAND--92-8462C; WSS/CI--92-6; CONF-9203140--1; ON: DE92012144
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400800
99 GENERAL AND MISCELLANEOUS
990200
ACETYLENE
CHEMICAL VAPOR DEPOSITION
COMBUSTION
COMBUSTION KINETICS
COMBUSTION, PYROLYSIS, AND HIGH-TEMPERATURE CHEMISTRY
COMPUTERIZED SIMULATION
DIAMONDS
FLAMES
HYDROGEN
MATHEMATICS AND COMPUTERS
METHANE
METHYL RADICALS
NUMERICAL SOLUTION
PREPARATION AND MANUFACTURE